IRFR024NTRPBF vs IRFR3710ZTRLPBF Vergleich
Detaillierter Direktvergleich von IRFR024NTRPBF von Infineon und IRFR3710ZTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR024NTRPBF | IRFR3710ZTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,58 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Series | HEXFET Power MOSFET (5th generation) | — |
| Transistortyp | N-Channel MOSFET | — |
| Maximum Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 17 A (at TC = 25 C) | — |
| Pulsed Drain Current (IDM) | 60 A | — |
| On-Resistance (RDS(on)) | 75 mOhm max (at VGS = 10 V) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Typical Gate Charge (Qg) | 13.3 nC | — |
| Total Power Dissipation (PD) | 45 W (at TC = 25 C) | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | TO-252-3 (DPAK, SC-63), surface mount | TO-252AA (DPAK), 3-pin (2+tab) |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape and Reel (TR) | — |
| RoHS Compliance | Compliant (Pb-free / PbF terminations) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide), HEXFET |
| Drain to Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C (Tc) | — | 42 A |
| Max Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | — | 18 mOhm |
| Gate-Source Voltage (Vgs) max | — | [DATA_NEEDED: Vgs max rating] |
| Gate Threshold Voltage (Vgs(th) typ) | — | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | — | 69 nC |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| Avalanche Energy Rating (EAS) | — | 150 mJ |
| Maximum Junction Temperature | — | 175 C |
| Automotive Qualification | — | AEC-Q101 (per Lisleapex listing) |
| Configuration | — | Single with built-in diode |
| Betriebstemperatur | — | -55 C to +175 C (TJ) |
| RoHS-Status | — | Compliant (Pb-free PBF suffix) |