IRFR024NTRPBF vs IRFR3710ZTRLPBF 비교

다음의 상세 나란히 비교: IRFR024NTRPBF 제조: Infineon 및 IRFR3710ZTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR024NTRPBF IRFR3710ZTRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.31 $0.58
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
트랜지스터 유형 N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A —
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
동작 접합 온도 -55 C to +175 C —
패키지 TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK), 3-pin (2+tab)
실장 유형 Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
MSL 레벨 1 (per JEDEC J-STD-020) —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide), HEXFET
Drain to Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C (Tc) — 42 A
Max Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V — 18 mOhm
Gate-Source Voltage (Vgs) max — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th) typ) — [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) — 69 nC
Power Dissipation (Pd) @ Tc=25C — 140 W
Avalanche Energy Rating (EAS) — 150 mJ
Maximum Junction Temperature — 175 C
Automotive Qualification — AEC-Q101 (per Lisleapex listing)
Configuration — Single with built-in diode
동작 온도 — -55 C to +175 C (TJ)
RoHS 상태 — Compliant (Pb-free PBF suffix)

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