IRFR2405TRLPBF vs IRFR220NPBF Vergleich
Detaillierter Direktvergleich von IRFR2405TRLPBF von Infineon und IRFR220NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR2405TRLPBF | IRFR220NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,55 | $0,74 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, 7th generation) | HEXFET (Planar) |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc | 56 A | — |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | — |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | — |
| Gate Charge (Qg) typical | 70 nC | — |
| Power Dissipation (PD) at Tc | 110 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction) | -55C to +150C (junction) |
| Gehäuse | TO-252AA (DPAK), 3-pin (2 + Tab) | — |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | Yes (per datasheet characterization) |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | Yes, lead-free (PBF suffix) |
| Packaging | Tape & Reel (TR) | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25C | — | 5 A |
| Power Dissipation (PD) at TC=25C | — | 43 W |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| Gehäuse / Bauform | — | TO-252AA (DPAK) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) plus tab |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |