IRFR3710ZTRPBF vs IRLU024NPBF Vergleich

Detaillierter Direktvergleich von IRFR3710ZTRPBF von Infineon und IRLU024NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFR3710ZTRPBF IRLU024NPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,42 $0,61
FET Type N-Channel N-Channel, Logic-Level
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 56 A 17 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W 45 W
Betriebs-Sperrschichttemperatur -55C to +175C -55C to +175C
Technology HEXFET (IR MOSFET) HEXFET Power MOSFET (5th generation)
Gehäuse TO-252AA (DPAK) IPAK (TO-251AA), Through Hole
Montageart Surface Mount Through Hole
RoHS-Status Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLU024NPBF
Drain-to-Source Voltage (VDS) — 55 V
On-Resistance RDS(on) max at VGS=10V — 65 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Total Gate Charge (Qg) — 10 nC (typical, per listing)
Thermal Resistance Junction-to-Case (RthJC) — 3.3 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 110 C/W (50 C/W PCB-mounted)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free plating)
Qualification — JEDEC standard
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)

Datenblätter & Ressourcen

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