IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
Teilenummer: IRLU024NPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $1.45 | $1,45 |
| 10 | $1.18 | $11,80 |
| 100 | $0.89 | $89,00 |
| 500 | $0.72 | $360,00 |
| 1.000 | $0.61 | $610,00 |
IRLU024NPBF Übersicht
A HEXFET power MOSFET is a specific class of N-channel enhancement-mode MOSFET built on International Rectifier's (now Infineon) HEXFET cell geometry, which uses a hexagonal cellular layout to maximize channel width per unit silicon area. This geometry produces very low on-resistance, high peak current capability, and rugged avalanche-rated switching behavior. The IRLU024NPBF is the logic-level variant of the 55 V family, meaning VGS(th) is reduced and the device can be fully enhanced at gate voltages compatible with 5 V microcontrollers, gate drivers, and TTL logic outputs - eliminating the need for a separate gate-drive supply in many low-side switch applications.
Key specifications include a continuous drain current of 17 A at TC = 25 °C, pulsed drain current handling suitable for inrush and motor-start transients, an on-resistance of 0.065 Ω maximum, and a total gate charge of approximately 10 nC that enables fast switching at frequencies from DC to several hundred kHz. Thermal resistance junction-to-case is rated at 3.3 °C/W and junction-to-ambient at 110 °C/W (or 50 °C/W PCB-mounted per the datasheet), giving designers a clear thermal budget for heatsink selection. The device is qualified to JEDEC standards and operates over the industrial -55 °C to +175 °C junction temperature range.
Typical applications include low-side switching in DC motor drives, solenoid and relay drivers, automotive 12 V load switching (fuel injectors, lamps, fans), power-OR'ing circuits, battery protection, synchronous-rectifier secondary-side switches, and high-efficiency DC-DC converter low-side FETs. Its logic-level gate and TO-251AA package make it especially suited for through-hole designs where thermal dissipation and mechanical ruggedness are required.
When designing with this device, calculate worst-case conduction loss as ID² × RDS(on) and ensure TC stays below 150 °C using the datasheet thermal derating curve. For switching applications, add a small gate-source resistor (10-100 Ω) to suppress ringing and a flyback or snubber diode across inductive loads to clamp the drain transient below the 55 V VDS rating.
This page synthesizes distributor pricing, drop-in IPAK alternatives, and practical thermal and gate-drive design guidance not found in the standalone datasheet PDF.
Drop-in-Alternativen für IRLU024NPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IRLU024NPBF (gleiche Bauform und Footprint) – abweichend in Package, Technology, Total Gate Charge (Qg), Continuous Drain Current (ID) at TC=25C, FET Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRLR024NPBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRF9Z34NPBF
✅ Drop-In✓ Auf Lager
$0.65 / Stück
Datenblatt ansehen →IRF4905PBF
✅ Drop-In✓ Auf Lager
$0.95 / Stück
Datenblatt ansehen →IRFR3710ZTRPBF
✅ Drop-In✓ Auf Lager
$0.42 / Stück
Datenblatt ansehen →IRFR5505TRPBF
✅ Drop-In✓ Auf Lager
$0.48 / Stück
Datenblatt ansehen →IRFR9024NTRPBF
✅ Drop-In✓ Auf Lager
$0.17 / Stück
Datenblatt ansehen →IRLU024NPBF Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLU024NPBF |
| FET Type | N-Channel, Logic-Level |
| Technology | HEXFET Power MOSFET (5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at TC=25C | 17 A |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) |
| Power Dissipation (PD) at TC=25C | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) |
| Betriebs-Sperrschichttemperatur | -55C to +175C |
| Gehäuse | IPAK (TO-251AA), Through Hole |
| Montageart | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) |
| Qualification | JEDEC standard |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) |
IRLU024NPBF Pin-Konfiguration
| Pin 1 | Gate — Gate drive input (logic-level, 4.5V-10V) |
| Pin 2 | Drain — Drain terminal (also connected to tab/heatsink) |
| Pin 3 | Source — Source terminal |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
IRLU024NPBF ist geeignet für 6 Anwendungs: Low-Side DC Motor Driver, Automotive 12 V Load Switch, Solenoid and Relay Driver, Synchronous Rectifier (Low-Side), Battery Protection / Power Path, LED Lighting Driver Switch.
Low-Side DC Motor Driver
The IRLU024NPBF is a strong fit for low-side PWM switching of small DC motors (12-24 V, up to ~10 A continuous) in industrial automation, robotics, and appliance control. Its logic-level gate (4.5 V capable) drives directly from a microcontroller or dedicated gate-driver IC such as the Infineon BTS3050EJXUMA1, eliminating the need for a charge pump. The 65 mΩ RDS(on) keeps conduction loss below 1 W at 5 A continuous, and the 55 V VDS rating provides ample headroom against 24 V bus transients and motor back-EMF. Mount in IPAK with a small heatsink to sustain 2-3 W dissipation in free air.
Empfohlen
Automotive 12 V Load Switch
The IRLU024NPBF suits automotive 12 V low-side load switching for lamps, fuel injectors, solenoids, and HVAC actuators drawing up to 17 A. Its 55 V VDS comfortably absorbs 12 V load-dump transients (35-40 V), and the logic-level gate interfaces directly with automotive 5 V microcontrollers. Through-hole IPAK packaging withstands vibration and thermal cycling better than SMD equivalents, and the PBF-suffix lead-free plating meets automotive environmental requirements. Designers add a flyback diode across inductive loads and a 100 Ω gate resistor for ringing control.
Empfohlen
Solenoid and Relay Driver
For industrial solenoid valves, pneumatic actuators, and electromechanical relays in 24 V control systems, the IRLU024NPBF provides fast, low-loss switching. Its 10 nC typical Qg enables sub-microsecond switching at 1 kHz PWM, reducing solenoid heating and allowing proportional valve control. The 17 A continuous rating covers most 24 V industrial solenoid coils drawing 1-3 A continuous with inrush transients to 8 A. A freewheeling diode (e.g., UF3007) across the solenoid is essential; the IPAK package also serves as a heatsink tab when bolted to a small aluminum plate.
Empfohlen
Synchronous Rectifier (Low-Side)
The IRLU024NPBF works as a secondary-side low-side synchronous rectifier in isolated DC-DC converters and forward-derived topologies operating below 55 V. Its low 65 mΩ RDS(on) reduces conduction loss compared to Schottky diodes, especially above 3 A load. The logic-level gate interfaces directly with synchronous-rectifier controller outputs. At frequencies above 200 kHz, designers evaluate Qrr and body-diode reverse-recovery - fifth-generation HEXFET behavior is acceptable for most telecom and industrial bus converters up to 5 A output.
Empfohlen
Battery Protection / Power Path
In multi-cell battery packs and portable equipment, the IRLU024NPBF serves as a power-path or reverse-polarity protection switch. Its 55 V VDS exceeds typical 4S Li-ion (16.8 V max) and 6S NiMH (12 V max) pack voltages, while the 17 A ID covers peak discharge pulses. Low RDS(on) minimizes voltage drop during high-current discharge, extending usable battery capacity. The logic-level gate allows direct control from a battery-management IC or fuel-gauge output, and the IPAK footprint supports through-hole constructions common in battery-pack assemblies.
Empfohlen
LED Lighting Driver Switch
The IRLU024NPBF is suitable for switching constant-current LED strings in architectural lighting, automotive tail-light drivers, and 24 V industrial luminaires. Its 55 V VDS supports long LED strings up to 14-16 high-brightness LEDs in series, while 17 A ID handles high-power LED arrays at full PWM dimming duty. The 4.5 V capable gate drives directly from 5 V microcontroller PWM outputs, and the IPAK package provides thermal headroom for continuous 2-3 W dissipation when mounted with modest copper area. Use it in low-side PWM dimming configurations up to a few kHz.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRLU024NPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRLR024NPBF | IRF9Z34NPBF | IRF4905PBF | IRFR3710ZTRPBF | IRFR5505TRPBF | IRFR9024NTRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-251AA (IPAK, through-hole) | TO-252AA (DPAK, SMD) | TO-251AA (IPAK) - same | TO-251AA (IPAK) - same | TO-252AA (DPAK, SMD) | TO-252AA (DPAK, SMD) | TO-252AA (DPAK, SMD) |
| FET Type / Polarity | N-Channel | N-Channel | P-Channel | P-Channel | N-Channel | P-Channel | P-Channel |
| VDS (Drain-Source Voltage) | 55 V | 55 V | -55 V | -55 V | 100 V | -55 V | -55 V |
| Continuous Drain Current (ID) | 17 A | 17 A | -17 A | -74 A | 56 A | -18 A | -11 A |
| RDS(on) max at VGS=10V | 65 mOhm | 65 mOhm | 140 mOhm | 20 mOhm | 9 mOhm | 110 mOhm | 175 mOhm |
| Power Dissipation (PD) | 45 W | 45 W | 45 W | 130 W | 140 W | 48 W | 38 W |
| Gate Drive Voltage | 10 V optimized (4.5 V capable, logic-level) | 10 V optimized (4.5 V capable) | 10 V standard | 10 V standard | 10 V standard | 10 V standard | 10 V standard |
| Unit Price (qty 1000, approx) | $0.61 | $0.58 | $0.92 | $1.85 | $0.79 | $1.05 | $0.68 |
Wichtigste Unterscheidungsmerkmale
- Through-hole IPAK packaging for rugged mechanical construction (vs. IRLR024NPBF)
- Logic-level gate compatible with 5 V microcontrollers (vs. IRF4905PBF)
- Lower price and broader inventory than P-channel equivalents in same package (vs. IRFR5505TRPBF)
Designhinweise
The IPAK (TO-251AA) package is rated 45 W at TC = 25 °C with RthJC = 3.3 °C/W. In free air (RthJA ≈ 110 °C/W) the IRLU024NPBF dissipates only about 1.4 W max before TJ hits 175 °C - usable but tight. Mount the tab to a PCB copper area of at least 200 mm², or bolt to a clip-on heatsink, to drop RthJA to 50 °C/W or lower and sustain 2-3 W continuous dissipation. Estimated: at 5 A continuous load and RDS(on) = 65 mΩ, conduction loss is 5² × 0.065 ≈ 1.6 W, manageable with modest copper.
Keep the gate-loop (gate-to-source return) physically short - typically under 10 mm - to suppress gate-oscillation on a logic-level MOSFET. Place a 10-100 Ω gate-source resistor in parallel with the gate-source path (physically close to the package) to damp high-frequency ringing caused by the gate-drain capacitance (Miller effect). For switching above 100 kHz, add a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source if ringing exceeds 10% of VDS.
Do not drive the IRLU024NPBF gate from a high-impedance source - logic-level HEXFETs have low VGS(th) (around 1-2 V) and are susceptible to accidental turn-on from dv/dt-induced Miller current on the drain. Always keep the gate pulled below VGS(th) when the device should be off, either with a pull-down resistor (10-100 kΩ) or by holding the driver output low. For inductive loads, add a freewheeling diode rated above the peak forward current with reverse recovery faster than 100 ns; otherwise, the body diode reverse-recovery can spike VDS above 55 V.
Compliance-Informationen
PBF suffix denotes lead-free matte-tin plating per Infineon part-numbering convention. JEDEC-qualified per datasheet front page. Not AEC-Q100 qualified - automotive designers should verify qualification status with Infineon or select an automotive-grade equivalent.
