IRFR5305TRLPBF vs IRFL014NTRPBF Vergleich
Detaillierter Direktvergleich von IRFR5305TRLPBF von Infineon und IRFL014NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR5305TRLPBF | IRFL014NTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,30 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 65 mΩ | — |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | TO-252AA (DPAK), surface mount | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (planar N-channel, fifth generation) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | Yes / Compliant |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 C | — | 1.9 A |
| Continuous Drain Current (ID) at 70 C | — | [DATA_NEEDED: ID at 70 C] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 160 milliohm |
| Gate Charge (Qg) typical | — | 7 nC |
| Threshold Voltage VGS(th) typical | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at 25 C | — | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| Betriebstemperaturbereich | — | -55 C to +150 C (junction) |
| dv/dt Rating | — | Yes (dynamic dv/dt rated) |
| MSL-Level | — | Level 1 (per JEDEC J-STD-020) |