IRFR5305TRLPBF vs IRFL014NTRPBF 비교

다음의 상세 나란히 비교: IRFR5305TRLPBF 제조: Infineon 및 IRFL014NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR5305TRLPBF IRFL014NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.38 $0.30
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
동작 접합 온도 -55C to +175C —
패키지 TO-252AA (DPAK), surface mount SOT-223 (TO-261-4), 4-pin (3 + tab)
실장 유형 Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (planar N-channel, fifth generation)
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") Yes / Compliant
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at 25 C — 1.9 A
Continuous Drain Current (ID) at 70 C — [DATA_NEEDED: ID at 70 C]
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=10V — 160 milliohm
Gate Charge (Qg) typical — 7 nC
Threshold Voltage VGS(th) typical — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at 25 C — 1.0 W (free air), up to 2.1 W with proper PCB copper
동작 온도 범위 — -55 C to +150 C (junction)
dv/dt Rating — Yes (dynamic dv/dt rated)
MSL 레벨 — Level 1 (per JEDEC J-STD-020)

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