IRFR5305TRLPBF vs IRFL014NTRPBF 对比

详细并排对比 IRFR5305TRLPBF 出自 Infineon 和 IRFL014NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR5305TRLPBF IRFL014NTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.38 $0.30
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
工作结温 -55C to +175C —
封装 TO-252AA (DPAK), surface mount SOT-223 (TO-261-4), 4-pin (3 + tab)
安装类型 Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (planar N-channel, fifth generation)
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") Yes / Compliant
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at 25 C — 1.9 A
Continuous Drain Current (ID) at 70 C — [DATA_NEEDED: ID at 70 C]
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=10V — 160 milliohm
Gate Charge (Qg) typical — 7 nC
Threshold Voltage VGS(th) typical — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at 25 C — 1.0 W (free air), up to 2.1 W with proper PCB copper
工作温度范围 — -55 C to +150 C (junction)
dv/dt Rating — Yes (dynamic dv/dt rated)
MSL 等级 — Level 1 (per JEDEC J-STD-020)

数据手册与资源

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