IRFR540ZTRLPBF vs IRFR3710ZTRPBF Vergleich
Detaillierter Direktvergleich von IRFR540ZTRLPBF von Infineon und IRFR3710ZTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR540ZTRLPBF | IRFR3710ZTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,42 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed IDM] |
| Static Drain-Source On-Resistance (RDS(on)) | 28.5 mΩ max at VGS=10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: ±V rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical V] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 39 nC | — |
| Power Dissipation (PD) at TC | 91 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55C to +175C |
| Technology | IR MOSFET™ / HEXFET® | HEXFET (IR MOSFET) |
| Gehäuse | TO-252AA (DPAK) surface mount | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Packaging | Tape & Reel (TR-L), 800-piece leader/trailer | — |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 18 mOhm |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |