IRFR540ZTRLPBF vs IRFR3710ZTRPBF Comparison

Detailed side-by-side comparison of IRFR540ZTRLPBF by Infineon and IRFR3710ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ Active

Specification Comparison

Parameter IRFR540ZTRLPBF IRFR3710ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.42
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC 35 A
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed IDM]
Static Drain-Source On-Resistance (RDS(on)) 28.5 mΩ max at VGS=10V
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical V] [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 39 nC
Power Dissipation (PD) at TC 91 W
Operating Junction Temperature -55 °C to +175 °C -55C to +175C
Technology IR MOSFET™ / HEXFET® HEXFET (IR MOSFET)
Package TO-252AA (DPAK) surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source)
Automotive Qualification AEC-Q101 qualified
Lead-Free / RoHS Yes (PBF suffix)
Packaging Tape & Reel (TR-L), 800-piece leader/trailer
Continuous Drain Current (ID) at TC=25C 56 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C]
Gate-Source Voltage (VGS) ±20 V
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm
Power Dissipation (PD) at TC=25C 140 W
RoHS Status Compliant
Lead-Free Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote