IRFR5505TRLPBF vs IRFR9024NTRLPBF Vergleich
Detaillierter Direktvergleich von IRFR5505TRLPBF von Infineon und IRFR9024NTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR5505TRLPBF | IRFR9024NTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,32 |
| Polarity | P-Channel | P-Channel |
| MOSFET Operating Mode | Enhancement | Enhancement |
| VDS (Drain-Source Voltage) | -55 V | — |
| VGS (Gate-Source Voltage) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) | -18 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max | 110 mOhm (VGS = -10 V) | — |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Power Dissipation (PD) | 57 W (Tc = 25 °C) | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC] | — |
| Technology | IR MOSFET™ (HEXFET® generation 5) | HEXFET (Generation 5) |
| Gehäuse | TO-252AA (DPAK), surface mount | — |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (LPBF suffix) |
| MSL-Level | 1 | — |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -11 A |
| On-Resistance RDS(on) max at VGS=-10V | — | 175 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissipation (PD) at TC=25C | — | 38 W |
| Gate Charge (Qg) typical | — | 12.7 nC |
| Package Type | — | TO-252AA (DPAK) |
| Pin-Anzahl | — | 3 (Drain, Gate, Source + Tab) |
| Reel Orientation | — | Left (TRL suffix) |