IRFR5505TRLPBF vs IRFR9024NTRLPBF Comparación
Comparación detallada lado a lado de IRFR5505TRLPBF por Infineon y IRFR9024NTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR5505TRLPBF | IRFR9024NTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,38 | $0,32 |
| Polarity | P-Channel | P-Channel |
| MOSFET Operating Mode | Enhancement | Enhancement |
| VDS (Drain-Source Voltage) | -55 V | — |
| VGS (Gate-Source Voltage) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) | -18 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max | 110 mOhm (VGS = -10 V) | — |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Power Dissipation (PD) | 57 W (Tc = 25 °C) | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC] | — |
| Technology | IR MOSFET™ (HEXFET® generation 5) | HEXFET (Generation 5) |
| Encapsulado | TO-252AA (DPAK), surface mount | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (LPBF suffix) |
| Nivel MSL | 1 | — |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -11 A |
| On-Resistance RDS(on) max at VGS=-10V | — | 175 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissipation (PD) at TC=25C | — | 38 W |
| Gate Charge (Qg) typical | — | 12.7 nC |
| Package Type | — | TO-252AA (DPAK) |
| Recuento de pines | — | 3 (Drain, Gate, Source + Tab) |
| Reel Orientation | — | Left (TRL suffix) |