IRFR5505TRPBF vs IRLR9343TRPBF Vergleich
Detaillierter Direktvergleich von IRFR5505TRPBF von Infineon und IRLR9343TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR5505TRPBF | IRLR9343TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,47 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| Polarity | P-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) | IR HEXFET |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | — |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) max | +/-20 V | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | 105 mOhm |
| Total Gate Charge (Qg) | 21.3 nC | 31 nC (typical) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| Gehäuse | TO-252AA (DPAK), surface mount | PG-TO252-3 (DPAK) Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Part Number | — | IRLR9343TRPBF |
| FET Type | — | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -20 A |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) at Tc=25C | — | 79 W |
| Betriebstemperaturbereich | — | [DATA_NEEDED: Tj min/max operating range] |
| MSL-Level | — | 1 |
| Optimized Application | — | Class-D audio amplifier output stages |