IRFR5505TRPBF vs IRLR9343TRPBF Comparison
Detailed side-by-side comparison of IRFR5505TRPBF by Infineon and IRLR9343TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR5505TRPBF | IRLR9343TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.47 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | β |
| Polarity | P-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) | IR HEXFET |
| Drain-Source Voltage (VDS) max | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -18 A | β |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) max | +/-20 V | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | 105 mOhm |
| Total Gate Charge (Qg) | 21.3 nC | 31 nC (typical) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Rise Time (tr) | [DATA_NEEDED: tr] | β |
| Fall Time (tf) | [DATA_NEEDED: tf] | β |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | β |
| Package | TO-252AA (DPAK), surface mount | PG-TO252-3 (DPAK) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Part Number | β | IRLR9343TRPBF |
| FET Type | β | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at Tc=25C | β | -20 A |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) at Tc=25C | β | 79 W |
| Operating Temperature Range | β | [DATA_NEEDED: Tj min/max operating range] |
| MSL Level | β | 1 |
| Optimized Application | β | Class-D audio amplifier output stages |