IRFR6215TRLPBF vs IRFR3710ZTRPBF Vergleich
Detaillierter Direktvergleich von IRFR6215TRLPBF von Infineon und IRFR3710ZTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR6215TRLPBF | IRFR3710ZTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,42 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -150 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed IDM] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 580 mOhm | — |
| Total Gate Charge (Qg) typ | 44 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET (Fifth Generation) | HEXFET (IR MOSFET) |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 18 mOhm |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |