IRFR6215TRLPBF vs IRFR3710ZTRPBF 对比
详细并排对比 IRFR6215TRLPBF 出自 Infineon 和 IRFR3710ZTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR6215TRLPBF | IRFR3710ZTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.42 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -150 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed IDM] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 580 mOhm | — |
| Total Gate Charge (Qg) typ | 44 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET (Fifth Generation) | HEXFET (IR MOSFET) |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 18 mOhm |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| 工作结温 | — | -55C to +175C |