IRFR9120NTRLPBF vs IRFR120NTRLPBF Vergleich
Detaillierter Direktvergleich von IRFR9120NTRLPBF von Infineon und IRFR120NTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR9120NTRLPBF | IRFR120NTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $0,62 |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | 100 V |
| Continuous Drain Current (ID) | -6.6 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | 480 mOhm max @ VGS = -10 V | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Power Dissipation (PD) | 40 W (Tc) | — |
| Betriebstemperaturbereich | -55C to +150C (Tj) | — |
| Gehäuse | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Technology | IR MOSFET (planar) | IR MOSFET (HEXFET) |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Total Gate Charge (Qg) | — | 16.7 nC |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| Betriebs-Sperrschichttemperaturbereich | — | -55C to +175C |
| Avalanche Energy Rated | — | Yes (fully avalanche rated) |
| Lead-Free Finish | — | Yes (Pb-free) |