IRFR9120NTRLPBF vs IRFR120NTRLPBF Comparación
Comparación detallada lado a lado de IRFR9120NTRLPBF por Infineon y IRFR120NTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR9120NTRLPBF | IRFR120NTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,61 | $0,62 |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | 100 V |
| Continuous Drain Current (ID) | -6.6 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance (RDS(on)) | 480 mOhm max @ VGS = -10 V | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Power Dissipation (PD) | 40 W (Tc) | — |
| Rango de temperatura de funcionamiento | -55C to +150C (Tj) | — |
| Encapsulado | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Technology | IR MOSFET (planar) | IR MOSFET (HEXFET) |
| Nivel MSL | 1 | — |
| Estado RoHS | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Total Gate Charge (Qg) | — | 16.7 nC |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| Rango de temperatura de unión de funcionamiento | — | -55C to +175C |
| Avalanche Energy Rated | — | Yes (fully avalanche rated) |
| Lead-Free Finish | — | Yes (Pb-free) |