IRFR9120NTRPBF vs IRFR120NTRPBF Vergleich
Detaillierter Direktvergleich von IRFR9120NTRPBF von Infineon und IRFR120NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR9120NTRPBF | IRFR120NTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,26 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25C | -6.6 A | 9.4 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max at VGS=-10V | 480 milliohm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 18 nC (typical) | — |
| Continuous Power Dissipation (PD) at TC=25C | 40 W | — |
| Betriebs-Sperrschichttemperaturbereich | -55C to +175C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Gehäuse | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited floor life) | — |
| Lead Finish / Plating | Pb-free (PBF suffix), Matte Tin | — |
| Technology | HEXFET fifth-generation IR MOSFET | HEXFET (IR MOSFET fifth generation) |
| RoHS-Status | Compliant | — |
| Moisture Sensitivity | MSL1 per JEDEC J-STD-020 | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Maximum Power Dissipation (PD) at TC=25C | — | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | — | 16.7 nC |
| Gate-to-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | — | [DATA_NEEDED: RthJC] |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |