IRFR9120NTRPBF vs IRFR120NTRPBF Сравнение

Подробное сравнение бок о бок IRFR9120NTRPBF от Infineon и IRFR120NTRPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

Infineon
IRFR9120NTRPBF IRFR9120NTRPBF - 100V P-Channel HEXFET MOSFET, 6.6A | Infineon

IRFR9120NTRPBF - 100V P-Channel HEXFET MOSFET, 6.6A | Infineon

IRFR9120NTRPBF ✓ Активен
Infineon
IRFR120NTRPBF IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF ✓ Активен

Сравнение характеристик

Параметр IRFR9120NTRPBF IRFR120NTRPBF
Бренд Infineon Infineon
Категория MOSFETs MOSFETs
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $0,32 $0,26
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC=25C -6.6 A 9.4 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V 480 milliohm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 18 nC (typical) —
Continuous Power Dissipation (PD) at TC=25C 40 W —
Диапазон рабочей температуры перехода -55C to +175C -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Корпус TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Тип монтажа Surface Mount Surface Mount
Уровень MSL 1 (unlimited floor life) —
Lead Finish / Plating Pb-free (PBF suffix), Matte Tin —
Technology HEXFET fifth-generation IR MOSFET HEXFET (IR MOSFET fifth generation)
Статус RoHS Compliant —
Moisture Sensitivity MSL1 per JEDEC J-STD-020 —
Drain-to-Source Voltage (VDS) — 100 V
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant

Даташиты & ресурсы

Все товары Создать BOM Запросить цену