IRFR9120NTRPBF vs IRFR120NTRPBF 비교

다음의 상세 나란히 비교: IRFR9120NTRPBF 제조: Infineon 및 IRFR120NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR9120NTRPBF IRFR120NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.32 $0.26
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC=25C -6.6 A 9.4 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V 480 milliohm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 18 nC (typical) —
Continuous Power Dissipation (PD) at TC=25C 40 W —
동작 접합 온도 범위 -55C to +175C -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
패키지 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (unlimited floor life) —
Lead Finish / Plating Pb-free (PBF suffix), Matte Tin —
Technology HEXFET fifth-generation IR MOSFET HEXFET (IR MOSFET fifth generation)
RoHS 상태 Compliant —
Moisture Sensitivity MSL1 per JEDEC J-STD-020 —
Drain-to-Source Voltage (VDS) — 100 V
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청