IRFS3306PBF vs IRFB3306PBF Vergleich

Detaillierter Direktvergleich von IRFS3306PBF von Infineon und IRFB3306PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFS3306PBF IRFB3306PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,28 $1,05
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET) IR HEXFET (MOSFET)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 120 A (package limited) —
Continuous Drain Current (ID, silicon limited) 160 A —
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
On-Resistance RDS(on) max @ VGS=10V 4.2 mOhm —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
Total Gate Charge (Qg) typ 85 nC [DATA_NEEDED: total gate charge Qg]
Gate-to-Drain Charge (Qgd) typ [DATA_NEEDED: Qgd nominal value] —
Power Dissipation (Pd) max @ Tc=25C 230 W —
Betriebs-Sperrschichttemperatur -55C to +175C -55°C to +175°C
Gehäuse D2PAK (TO-263AB) surface mount TO-220AB (through-hole)
Montageart Surface Mount Through Hole
MSL-Level 1 (per JEDEC J-STD-020) —
Lead-Free / RoHS PbF (lead-free), RoHS compliant —
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25°C — 120 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max — ±20 V
Rds(on) max @ Vgs=10V — 4.2 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Gate-Drain Charge (Qgd) typ — 26 nC (nominal)
Power Dissipation (Pd) at Tc=25°C — 230 W
RoHS / Lead-Free (PbF) — Yes (PbF suffix indicates lead-free, RoHS compliant)
Avalanche Rated — Yes
Body Diode — Intrinsic (avalanche-rated)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern