IRFS3306PBF vs IRFB3306PBF Comparaison
Comparaison détaillée côte à côte de IRFS3306PBF par Infineon et IRFB3306PBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFS3306PBF | IRFB3306PBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,28 | $1,05 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET) | IR HEXFET (MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 120 A (package limited) | — |
| Continuous Drain Current (ID, silicon limited) | 160 A | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.2 mOhm | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| Total Gate Charge (Qg) typ | 85 nC | [DATA_NEEDED: total gate charge Qg] |
| Gate-to-Drain Charge (Qgd) typ | [DATA_NEEDED: Qgd nominal value] | — |
| Power Dissipation (Pd) max @ Tc=25C | 230 W | — |
| Température de jonction en fonctionnement | -55C to +175C | -55°C to +175°C |
| Boîtier | D2PAK (TO-263AB) surface mount | TO-220AB (through-hole) |
| Type de montage | Surface Mount | Through Hole |
| Niveau MSL | 1 (per JEDEC J-STD-020) | — |
| Lead-Free / RoHS | PbF (lead-free), RoHS compliant | — |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25°C | — | 120 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Rds(on) max @ Vgs=10V | — | 4.2 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate-Drain Charge (Qgd) typ | — | 26 nC (nominal) |
| Power Dissipation (Pd) at Tc=25°C | — | 230 W |
| RoHS / Lead-Free (PbF) | — | Yes (PbF suffix indicates lead-free, RoHS compliant) |
| Avalanche Rated | — | Yes |
| Body Diode | — | Intrinsic (avalanche-rated) |