IRFZ24NPBF vs IRFZ34NPBF Vergleich
Detaillierter Direktvergleich von IRFZ24NPBF von Infineon und IRFZ34NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFZ24NPBF | IRFZ34NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,46 | $0,61 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ± 20 V | — |
| RDS(on) at VGS=10V | 70 mOhm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 13.3 nC | — |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | TO-220AB (through hole) | TO-220AB (3-pin + tab, through-hole) |
| Montageart | Through Hole | Through Hole |
| Technology | HEXFET planar cell | HEXFET (Planar DMOS, 5th generation) |
| Switching Frequency Range | Optimized for < 100 kHz | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | JEDEC standard | JEDEC standard |
| Channel Mode | Enhancement | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Status | — | Active |
| Drain-Source Voltage (V_DSS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 29 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc=25C | — | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 40 mOhm |
| Gate Charge (Q_g) typ | — | 22.7 nC |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (C_iss) typ | — | [DATA_NEEDED: input capacitance] |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Maximum Junction Temperature | — | 175 C |
| Lead-Free Status | — | Yes (Pb-free, RoHS compliant) |
| Configuration | — | Single N-Channel, 3-pin (3+tab) |