IRFZ24NPBF vs IRFZ34NPBF 对比
详细并排对比 IRFZ24NPBF 出自 Infineon 和 IRFZ34NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFZ24NPBF | IRFZ34NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.46 | $0.61 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ± 20 V | — |
| RDS(on) at VGS=10V | 70 mOhm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 13.3 nC | — |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | TO-220AB (through hole) | TO-220AB (3-pin + tab, through-hole) |
| 安装类型 | Through Hole | Through Hole |
| Technology | HEXFET planar cell | HEXFET (Planar DMOS, 5th generation) |
| Switching Frequency Range | Optimized for < 100 kHz | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | JEDEC standard | JEDEC standard |
| Channel Mode | Enhancement | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Status | — | Active |
| Drain-Source Voltage (V_DSS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 29 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc=25C | — | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 40 mOhm |
| Gate Charge (Q_g) typ | — | 22.7 nC |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (C_iss) typ | — | [DATA_NEEDED: input capacitance] |
| 工作温度范围 | — | -55 C to +175 C |
| Maximum Junction Temperature | — | 175 C |
| Lead-Free Status | — | Yes (Pb-free, RoHS compliant) |
| Configuration | — | Single N-Channel, 3-pin (3+tab) |