IRFZ24NPBF vs IRFZ34NPBF Comparaison
Comparaison détaillée côte à côte de IRFZ24NPBF par Infineon et IRFZ34NPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFZ24NPBF | IRFZ34NPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,46 | $0,61 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ± 20 V | — |
| RDS(on) at VGS=10V | 70 mOhm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 13.3 nC | — |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| Température de jonction en fonctionnement | -55C to +175C | — |
| Boîtier | TO-220AB (through hole) | TO-220AB (3-pin + tab, through-hole) |
| Type de montage | Through Hole | Through Hole |
| Technology | HEXFET planar cell | HEXFET (Planar DMOS, 5th generation) |
| Switching Frequency Range | Optimized for < 100 kHz | — |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | JEDEC standard | JEDEC standard |
| Channel Mode | Enhancement | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Status | — | Active |
| Drain-Source Voltage (V_DSS) | — | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 29 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc=25C | — | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 40 mOhm |
| Gate Charge (Q_g) typ | — | 22.7 nC |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (C_iss) typ | — | [DATA_NEEDED: input capacitance] |
| Plage de température de fonctionnement | — | -55 C to +175 C |
| Maximum Junction Temperature | — | 175 C |
| Lead-Free Status | — | Yes (Pb-free, RoHS compliant) |
| Configuration | — | Single N-Channel, 3-pin (3+tab) |