IRFZ34NPBF vs IRFR3411TRPBF Vergleich

Detaillierter Direktvergleich von IRFZ34NPBF von Infineon und IRFR3411TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFZ34NPBF IRFR3411TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,61 $0,55
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Status Active —
FET Type N-Channel, Enhancement Mode MOSFET (Metal Oxide)
Technology HEXFET (Planar DMOS, 5th generation) HEXFET Power MOSFET (IR)
Drain-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25C 29 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc=25C 68 W —
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm —
Gate Charge (Q_g) typ 22.7 nC —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] —
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] —
Betriebstemperaturbereich -55 C to +175 C -55 C to +175 C
Maximum Junction Temperature 175 C 175 C
Gehäuse TO-220AB (3-pin + tab, through-hole) TO-252AA (DPAK)
Montageart Through Hole Surface Mount
Lead-Free Status Yes (Pb-free, RoHS compliant) —
Qualification JEDEC standard —
RoHS-Status Compliant —
Configuration Single N-Channel, 3-pin (3+tab) —
Polarity — N-Channel
V(BR)DSS (Drain-Source Breakdown Voltage) — 100 V
RDS(on) max @ VGS=10V — 44 mOhm
Continuous Drain Current (Id) @ Tc — 32 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Pd) @ Tc — 130 W
Gate Charge (Qg) — 48 nC
Operating Mode — Enhancement
Anzahl der Pins — 3
Avalanche Rated — Yes (fully avalanche rated)
dv/dt Rating — Dynamic dv/dt rated
Lead-Free / RoHS — Yes (Lead-free, PBF suffix)

Datenblätter & Ressourcen

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