IRFZ34NPBF vs IRFR3411TRPBF Comparaison
Comparaison détaillée côte à côte de IRFZ34NPBF par Infineon et IRFR3411TRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFZ34NPBF | IRFR3411TRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,61 | $0,55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | MOSFET (Metal Oxide) |
| Technology | HEXFET (Planar DMOS, 5th generation) | HEXFET Power MOSFET (IR) |
| Drain-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc=25C | 68 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | — |
| Gate Charge (Q_g) typ | 22.7 nC | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | — |
| Plage de température de fonctionnement | -55 C to +175 C | -55 C to +175 C |
| Maximum Junction Temperature | 175 C | 175 C |
| Boîtier | TO-220AB (3-pin + tab, through-hole) | TO-252AA (DPAK) |
| Type de montage | Through Hole | Surface Mount |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | — |
| Qualification | JEDEC standard | — |
| Statut RoHS | Compliant | — |
| Configuration | Single N-Channel, 3-pin (3+tab) | — |
| Polarity | — | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 100 V |
| RDS(on) max @ VGS=10V | — | 44 mOhm |
| Continuous Drain Current (Id) @ Tc | — | 32 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | — | 130 W |
| Gate Charge (Qg) | — | 48 nC |
| Operating Mode | — | Enhancement |
| Nombre de broches | — | 3 |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Lead-Free / RoHS | — | Yes (Lead-free, PBF suffix) |