IRFZ48NPBF vs IRF640NPBF Vergleich
Detaillierter Direktvergleich von IRFZ48NPBF von Infineon und IRF640NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFZ48NPBF | IRF640NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,88 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | 44.7 nC |
| Power Dissipation (PD) at TC | 130 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55C to +150C |
| Gehäuse | TO-220AB (through-hole) | TO-220AB (through-hole, 3-pin) |
| Montageart | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | HEXFET (5th Generation) |
| Lead-Free (PBF suffix) | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Qualification Standard | Industrial market | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Transistortyp | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |