IRFZ48NPBF vs IRF640NPBF Comparación
Comparación detallada lado a lado de IRFZ48NPBF por Infineon y IRF640NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFZ48NPBF | IRF640NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,65 | $0,88 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | 44.7 nC |
| Power Dissipation (PD) at TC | 130 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55C to +150C |
| Encapsulado | TO-220AB (through-hole) | TO-220AB (through-hole, 3-pin) |
| Tipo de montaje | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | HEXFET (5th Generation) |
| Lead-Free (PBF suffix) | Yes | — |
| Estado RoHS | Compliant | Compliant |
| Qualification Standard | Industrial market | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Tipo de transistor | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |