IRL3705NPBF vs IRFB7534PBF Vergleich

Detaillierter Direktvergleich von IRL3705NPBF von Infineon und IRFB7534PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRL3705NPBF IRFB7534PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $1,85
FET Type N-Channel —
Drain-Source Voltage (V_DS) 55 V —
Continuous Drain Current (I_D) at Tc 89 A —
Gepulster Drain-Strom [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc 170 W —
On-Resistance R_DS(on) 10 mOhm (typical, V_GS = 5 V) —
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Q_g 65.3 nC —
Maximum Junction Temperature 175 C —
Technology HEXFET (planar cell, fifth generation) StrongIRFET™ (planar N-channel)
Gehäuse TO-220AB (3-pin through-hole) TO-220AB
Montageart Through Hole Through Hole
Gate Drive Level Logic-level —
Avalanche Rated Yes (ruggedized single-pulse avalanche) —
Lead-Free (PBF suffix) Yes —
RoHS-Status Compliant (per PBF suffix) Compliant (PbF suffix)
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
Betriebstemperaturbereich — -55C to +175C
MSL-Level — MSL1 (unlimited floor life)

Datenblätter & Ressourcen

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