IRL3705NPBF vs IRFB7534PBF 对比

详细并排对比 IRL3705NPBF 出自 Infineon 和 IRFB7534PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRL3705NPBF IRFB7534PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.92 $1.85
FET Type N-Channel —
Drain-Source Voltage (V_DS) 55 V —
Continuous Drain Current (I_D) at Tc 89 A —
脉冲漏极电流 [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc 170 W —
On-Resistance R_DS(on) 10 mOhm (typical, V_GS = 5 V) —
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Q_g 65.3 nC —
Maximum Junction Temperature 175 C —
Technology HEXFET (planar cell, fifth generation) StrongIRFET™ (planar N-channel)
封装 TO-220AB (3-pin through-hole) TO-220AB
安装类型 Through Hole Through Hole
Gate Drive Level Logic-level —
Avalanche Rated Yes (ruggedized single-pulse avalanche) —
Lead-Free (PBF suffix) Yes —
RoHS 状态 Compliant (per PBF suffix) Compliant (PbF suffix)
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
工作温度范围 — -55C to +175C
MSL 等级 — MSL1 (unlimited floor life)

数据手册与资源

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