IRLB3813PBF vs IRFR4615TRLPBF Vergleich
Detaillierter Direktvergleich von IRLB3813PBF von Infineon und IRFR4615TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLB3813PBF | IRFR4615TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,42 | $0,39 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET (HEXFET) | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 260 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 1.95 mOhm | 42 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 57 nC (typical, per Mouser snippet) | 26 nC |
| Power Dissipation (PD) at Tc=25C | 230 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) | — |
| Gehäuse | TO-220AB (through-hole) | TO-252AA (DPAK) |
| Montageart | Through Hole | Surface Mount |
| Gate Drive Level | Logic-level (fully enhanced at 4.5 V VGS) | — |
| Avalanche Rated | Yes (per datasheet: fully characterised avalanche voltage and current) | — |
| Qualification Standard | JEDEC (industrial market) | — |
| RoHS-Status | Compliant (Pb-free suffix PBF) | — |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Betriebstemperaturbereich | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| Einzelpuls-Avalanche-Energie | — | 109 mJ |