IRLB3813PBF vs IRFR4615TRLPBF Comparaison
Comparaison détaillée côte à côte de IRLB3813PBF par Infineon et IRFR4615TRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRLB3813PBF | IRFR4615TRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,42 | $0,39 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET (HEXFET) | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 260 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 1.95 mOhm | 42 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 57 nC (typical, per Mouser snippet) | 26 nC |
| Power Dissipation (PD) at Tc=25C | 230 W | — |
| Température de jonction en fonctionnement | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) | — |
| Boîtier | TO-220AB (through-hole) | TO-252AA (DPAK) |
| Type de montage | Through Hole | Surface Mount |
| Gate Drive Level | Logic-level (fully enhanced at 4.5 V VGS) | — |
| Avalanche Rated | Yes (per datasheet: fully characterised avalanche voltage and current) | — |
| Qualification Standard | JEDEC (industrial market) | — |
| Statut RoHS | Compliant (Pb-free suffix PBF) | — |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Plage de température de fonctionnement | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| Énergie d'avalanche à impulsion unique | — | 109 mJ |