IRLB3813PBF vs IRFR4615TRLPBF 비교
다음의 상세 나란히 비교: IRLB3813PBF 제조: Infineon 및 IRFR4615TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLB3813PBF | IRFR4615TRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.42 | $0.39 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET (HEXFET) | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 260 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 1.95 mOhm | 42 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 57 nC (typical, per Mouser snippet) | 26 nC |
| Power Dissipation (PD) at Tc=25C | 230 W | — |
| 동작 접합 온도 | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) | — |
| 패키지 | TO-220AB (through-hole) | TO-252AA (DPAK) |
| 실장 유형 | Through Hole | Surface Mount |
| Gate Drive Level | Logic-level (fully enhanced at 4.5 V VGS) | — |
| Avalanche Rated | Yes (per datasheet: fully characterised avalanche voltage and current) | — |
| Qualification Standard | JEDEC (industrial market) | — |
| RoHS 상태 | Compliant (Pb-free suffix PBF) | — |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| 동작 온도 범위 | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| 단일 펄스 애벌런치 에너지 | — | 109 mJ |