IRLB4132PBF vs IRF3205ZSTRLPBF Vergleich
Detaillierter Direktvergleich von IRLB4132PBF von Infineon und IRF3205ZSTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLB4132PBF | IRF3205ZSTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $1,45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Transistortyp | N-Channel MOSFET (HEXFET) | — |
| Drain-Source Voltage (VDS) | 30 V | 55 V |
| Continuous Drain Current (ID, Tc=25C) | 78 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD, Tc=25C) | 140 W | — |
| On-Resistance (RDS(on), VGS=10V) | 3.5 mOhm (typical) | — |
| On-Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th), typical) | 1.0 V to 2.5 V | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: total gate charge] | — |
| Maximum Junction Temperature | 175 C | — |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Gehäuse / Bauform | TO-220AB (through-hole, 3 leads) | — |
| Montageart | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free PBF suffix) | — |
| AEC-Q101 Automotive Qualification | Not qualified (industrial/commercial) | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (IR MOSFET) |
| Continuous Drain Current (ID) at Tc=25C | — | 110 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance RDS(on) max @ VGS=10V | — | 6.5 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 76 nC |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Gehäuse | — | D2PAK (TO-263) |
| Packaging | — | Tape & Reel (left reel) |
| RoHS-Status | — | Compliant |
| MSL-Level | — | 1 |
| Body Diode | — | Avalanche-rated intrinsic |