IRLB4132PBF vs IRF3205ZSTRLPBF Comparación
Comparación detallada lado a lado de IRLB4132PBF por Infineon y IRF3205ZSTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLB4132PBF | IRF3205ZSTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $1,45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Tipo de transistor | N-Channel MOSFET (HEXFET) | — |
| Drain-Source Voltage (VDS) | 30 V | 55 V |
| Continuous Drain Current (ID, Tc=25C) | 78 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD, Tc=25C) | 140 W | — |
| On-Resistance (RDS(on), VGS=10V) | 3.5 mOhm (typical) | — |
| On-Resistance (RDS(on), VGS=4.5V) | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th), typical) | 1.0 V to 2.5 V | — |
| Gate Charge (Qg, typical) | [DATA_NEEDED: total gate charge] | — |
| Maximum Junction Temperature | 175 C | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C | — |
| Encapsulado / Carcasa | TO-220AB (through-hole, 3 leads) | — |
| Tipo de montaje | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free PBF suffix) | — |
| AEC-Q101 Automotive Qualification | Not qualified (industrial/commercial) | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET (IR MOSFET) |
| Continuous Drain Current (ID) at Tc=25C | — | 110 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance RDS(on) max @ VGS=10V | — | 6.5 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 76 nC |
| Power Dissipation (PD) at Tc=25C | — | 170 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Encapsulado | — | D2PAK (TO-263) |
| Packaging | — | Tape & Reel (left reel) |
| Estado RoHS | — | Compliant |
| Nivel MSL | — | 1 |
| Body Diode | — | Avalanche-rated intrinsic |