IRLB8748PBF vs BSC034N06NSATMA1 Vergleich

Detaillierter Direktvergleich von IRLB8748PBF von Infineon und BSC034N06NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLB8748PBF BSC034N06NSATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,68 $0,65
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at TC=25C 92 A 100 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical [DATA_NEEDED: Qg]
Power Dissipation (PD) at TC=25C 75 W —
Betriebstemperaturbereich -55C to +175C (junction) -55C to +150C
Package Type TO-220AB through-hole —
Montageart Through Hole Surface Mount
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel —
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
RoHS-Status Compliant (Pb-free PBF suffix) Compliant
Qualification Standard JEDEC (Industrial market per datasheet) —
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
Technology — OptiMOS 5
Gehäuse — PG-TDSON-8-7 (SuperSO8 5x6 mm)
MSL-Level — [DATA_NEEDED: MSL level]

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern