IRLL2705TRPBF vs BSL215CH6327XTSA1 Vergleich
Detaillierter Direktvergleich von IRLL2705TRPBF von Infineon und BSL215CH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ AktivSpezifikationsvergleich
| Parameter | IRLL2705TRPBF | BSL215CH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,22 | $0,21 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel and P-Channel Complementary Pair |
| Technology | HEXFET (IR MOSFET fifth generation) | OptiMOS trench MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at 25 deg C | 3.8 A | — |
| Peak Drain Current (IDM, pulsed) | 5.2 A | — |
| RDS(on) max at VGS=10V | 40 mOhm | — |
| Total Gate Charge (Qg) | 32 nC | — |
| Gate Drive Level | Logic-Level | — |
| Power Dissipation at TA=25 deg C | 1 W (Ta), 2.1 W (per LCSC listing) | — |
| Betriebstemperaturbereich | -55 deg C to +175 deg C | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | SOT-223 | — |
| Dynamic dv/dt Rating | Yes | — |
| Lead-Free | Yes (PBF suffix) | Yes |
| RoHS-Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| Gehäuse / Bauform | — | PG-TSOP6-6 (6-pin TSOP) |
| Betriebstemperatur | — | -55C to +150C |
| Configuration | — | Half-bridge (1 N + 1 P) |
| MSL-Level | — | 1 (unlimited) |