IRLML2803TRPBF vs IRLML0030TRPBF Vergleich
Detaillierter Direktvergleich von IRLML2803TRPBF von Infineon und IRLML0030TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML2803TRPBF | IRLML0030TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,13 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLML2803TRPBF | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | IR HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | Logic-level (5 V optimized) |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | 1.3 W |
| Gehäuse | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 (3-pin) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (TJ) | -55C to +150C |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| MSL-Level | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS Compliance | Compliant, Halogen-Free | — |
| FET Type | — | N-Channel |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |
| RoHS-Status | — | Compliant |