IRLML2803TRPBF vs IRLML0030TRPBF 对比
详细并排对比 IRLML2803TRPBF 出自 Infineon 和 IRLML0030TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLML2803TRPBF | IRLML0030TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.13 | $0.13 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLML2803TRPBF | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | IR HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | Logic-level (5 V optimized) |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | 1.3 W |
| 封装 | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 (3-pin) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (TJ) | -55C to +150C |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| MSL 等级 | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS Compliance | Compliant, Halogen-Free | — |
| FET Type | — | N-Channel |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |
| RoHS 状态 | — | Compliant |