IRLML2803TRPBF vs IRLML6346TRPBF Vergleich
Detaillierter Direktvergleich von IRLML2803TRPBF von Infineon und IRLML6346TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLML2803TRPBF | IRLML6346TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,18 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLML2803TRPBF | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| Gehäuse | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (TJ) | — |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| MSL-Level | 1 | 1 |
| RoHS Compliance | Compliant, Halogen-Free | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) | — | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Lead-Free Finish | — | Yes (PBF suffix) |
| RoHS-Status | — | Compliant |