IRLR120NTRPBF vs IRFR220NTRPBF Vergleich

Detaillierter Direktvergleich von IRLR120NTRPBF von Infineon und IRFR220NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLR120NTRPBF IRFR220NTRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,27 $0,22
FET Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (Fifth Generation, planar) HEXFET (IR MOSFET)
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 10 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] —
Rds(on) Max at Vgs=10V 185 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Total Gate Charge (Qg) 13.3 nC 15 nC (typical per Mouser listing)
Power Dissipation (Pd) at Tc=25C 48 W —
Betriebstemperaturbereich -55C to +175C (junction) —
Gehäuse TO-252AA (DPAK), 3-pin surface mount TO-252AA (DPAK), surface mount
Montageart Surface Mount Surface Mount
Avalanche Energy Rating Fully avalanche rated —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
MSL-Level 1 1 (unlimited floor life per JEDEC J-STD-020)
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance Rds(on) max at VGS=10V — 600 milliohm
Maximum Power Dissition (PD) at TC=25°C — 43 W
Betriebs-Sperrschichttemperatur — -55°C to +150°C
RoHS-Status — Compliant (PBF suffix)
Avalanche Energy Rated — Yes (fully characterized)
Lead-Free — Yes (PBF suffix indicates Pb-free plating)

Datenblätter & Ressourcen

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