IRLR120NTRPBF vs IRFR220NTRPBF 비교

다음의 상세 나란히 비교: IRLR120NTRPBF 제조: Infineon 및 IRFR220NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRLR120NTRPBF IRFR220NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.27 $0.22
FET Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (Fifth Generation, planar) HEXFET (IR MOSFET)
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 10 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] —
Rds(on) Max at Vgs=10V 185 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Total Gate Charge (Qg) 13.3 nC 15 nC (typical per Mouser listing)
Power Dissipation (Pd) at Tc=25C 48 W —
동작 온도 범위 -55C to +175C (junction) —
패키지 TO-252AA (DPAK), 3-pin surface mount TO-252AA (DPAK), surface mount
실장 유형 Surface Mount Surface Mount
Avalanche Energy Rating Fully avalanche rated —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
MSL 레벨 1 1 (unlimited floor life per JEDEC J-STD-020)
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance Rds(on) max at VGS=10V — 600 milliohm
Maximum Power Dissition (PD) at TC=25°C — 43 W
동작 접합 온도 — -55°C to +150°C
RoHS 상태 — Compliant (PBF suffix)
Avalanche Energy Rated — Yes (fully characterized)
Lead-Free — Yes (PBF suffix indicates Pb-free plating)

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