IRLR120NTRPBF vs IRLB4030PBF Vergleich

Detaillierter Direktvergleich von IRLR120NTRPBF von Infineon und IRLB4030PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLR120NTRPBF IRLB4030PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,27 $3,10
FET Type N-Channel MOSFET —
Technology HEXFET (Fifth Generation, planar) HEXFET (StrongIRFET family)
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 10 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] —
Rds(on) Max at Vgs=10V 185 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Total Gate Charge (Qg) 13.3 nC 87 nC
Power Dissipation (Pd) at Tc=25C 48 W —
Betriebstemperaturbereich -55C to +175C (junction) -55C to +175C
Gehäuse TO-252AA (DPAK), 3-pin surface mount TO-220AB
Montageart Surface Mount Through Hole
Avalanche Energy Rating Fully avalanche rated —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
MSL-Level 1 —
Transistortyp — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 180 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 4.3 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc — 370 W
Logic Level Drive — Yes (optimized for 4.5 V to 10 V VGS)
Qualification — JEDEC
RoHS-Status — Compliant

Datenblätter & Ressourcen

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