IRLR2705TRPBF vs IRLR2905TRPBF Vergleich
Detaillierter Direktvergleich von IRLR2705TRPBF von Infineon und IRLR2905TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR2705TRPBF | IRLR2905TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,61 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 28 A | 42 A |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C with 1in2 copper] | — |
| RDS(on) Max at VGS=10V | 40 mOhm | — |
| RDS(on) Max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-to-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute max, +/-V] | — |
| Gate Threshold Voltage (VGS(th)) | Logic-Level (compatible with 4V drive) | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 16.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 68 W | 110 W |
| Power Dissipation (PD) at TA=25C | [DATA_NEEDED: PD at TA=25C with 1in2 copper] | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | -55C to +175C |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET generation 5) | HEXFET (IR MOSFET, fifth generation) |
| Avalanche Rated | Yes | Yes |
| Lead-Free / RoHS | Yes (Pb-free, RoHS compliant) | Yes / Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | [DATA_NEEDED: MSL rating] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Charge (Qg) | — | 32 nC |
| Gate Drive | — | Logic-level compatible |