IRLR3114ZTRPBF vs IRL540NSTRLPBF Vergleich
Detaillierter Direktvergleich von IRLR3114ZTRPBF von Infineon und IRL540NSTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR3114ZTRPBF | IRL540NSTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,46 | $0,51 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID, Tc=25 C) | 42 A | — |
| Continuous Drain Current (ID, Tc=100 C) | 30 A | — |
| Pulsed Drain Current (IDM) | 130 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | 16 V | ±16 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) | Logic-level |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mOhm | — |
| On-Resistance RDS(on) @ VGS=4.5V | 4.9 mOhm | — |
| Total Gate Charge (Qg) | 40 nC @ VGS=4.5 V | 49.3 nC |
| Input Capacitance (Ciss) | 3.81 nF | — |
| Power Dissipation (Pd, Tc=25 C) | 140 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | TO-252AA (DPAK) surface mount | TO-263 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 (2 + tab) | — |
| RoHS-Status | Compliant | Compliant (LPBF suffix indicates lead-free) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25°C | — | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 44 mΩ |
| On-Resistance (RDS(on)) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Power Dissipation (PD) at Tc=25°C | — | 140 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Betriebstemperaturbereich | — | -55°C to +175°C |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |