IRLR3636TRLPBF vs IRLR3636TRPBF Vergleich

Detaillierter Direktvergleich von IRLR3636TRLPBF von Infineon und IRLR3636TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRLR3636TRLPBF IRLR3636TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,74 $2,38
FET Type N-Channel MOSFET N-Channel MOSFET, Metal Oxide
Technology IR HEXFET® (IR MOSFET™) IR HEXFET / IR MOSFET
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, TC=25°C) 50 A —
Continuous Drain Current (ID, TC=100°C) 32 A [DATA_NEEDED: exact TC=100°C ID rating] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM rating] —
RDS(on) Max @ VGS=10V 6.8 mΩ —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level) —
Total Gate Charge (QG) 33 nC —
Power Dissipation (PD, TC=25°C) 143 W —
Betriebstemperaturbereich -55 °C to +175 °C (TJ) -55C to +175C
Gehäuse TO-252AA (DPAK) TO-252AA (DPAK)
Montageart Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
Avalanche Rated Yes (per Infineon datasheet family) —
Drain-to-Source Voltage (V_DSS) — 60 V
Continuous Drain Current (I_D) at T_C = 25C — 50 A
Continuous Drain Current (I_D) at T_C = 100C — [DATA_NEEDED: I_D at 100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Maximum R_DS(on) at V_GS = 10V — 6.8 mOhm
Typical R_DS(on) at V_GS = 10V — 5.4 mOhm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) range]
Total Gate Charge (Q_G) — 33 nC
Maximum Power Dissition (P_D) at T_C = 25C — 143 W
RoHS-Status — Compliant
Lead-Free — Yes (PBF suffix)

Datenblätter & Ressourcen

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