IRLR7843TRPBF vs IRLR2905TRPBF Vergleich
Detaillierter Direktvergleich von IRLR7843TRPBF von Infineon und IRLR2905TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR7843TRPBF | IRLR2905TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,61 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 161 A | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| On-Resistance Rds(on) Max @ Vgs=10V | 3.3 mOhm | — |
| On-Resistance Rds(on) Max @ Vgs=4.5V | 4.5 mOhm (typ) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 34 nC | — |
| Gate-to-Source Voltage Max | ±20 V | — |
| Avalanche Energy (Eas) | Fully characterized | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET | HEXFET (IR MOSFET, fifth generation) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | Yes / Compliant |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | 32 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Avalanche Rated | — | Yes |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Gate Drive | — | Logic-level compatible |