IRLR9343TRPBF vs IRFR5505TRPBF Vergleich
Detaillierter Direktvergleich von IRLR9343TRPBF von Infineon und IRFR5505TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRLR9343TRPBF | IRFR5505TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,47 | $0,48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLR9343TRPBF | — |
| FET Type | P-Channel MOSFET | — |
| Technology | IR HEXFET | IR MOSFET (HEXFET 5th generation) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | -72 A |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm | 110 mOhm |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 31 nC (typical) | 21.3 nC |
| Power Dissipation (PD) at Tc=25C | 79 W | — |
| Gehäuse | PG-TO252-3 (DPAK) Surface Mount | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj min/max operating range] | — |
| RoHS-Status | Compliant | Compliant (PBF suffix) |
| Lead-Free | Yes | Yes (PBF suffix) |
| MSL-Level | 1 | — |
| Optimized Application | Class-D audio amplifier output stages | — |
| Polarity | P-Channel | P-Channel |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -18 A |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 50 C/W (typical, DPAK on 1 oz copper) |